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Si4943BDY
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.019 at V GS = - 10 V
0.031 at V GS = - 4.5 V
I D (A)
- 8.4
- 6.7
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switching
- Computer
- Game Systems
? Battery Switching
- 2-Cell Li-Ion
SO-8
S 1
S 2
S 1
G 1
1
2
8
7
D 1
D 1
S 2
G 2
3
4
6
5
D 2
D 2
G 1
G 2
Top View
Ordering Information: Si4943BDY-T1-E3 (Lead (Pb)-free)
D 1
D 2
Si4943BDY -T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 20
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 8.4
- 6.7
- 30
- 6.3
- 5.1
A
Continuous Source Current (Diode Conduction) a
I S
- 1.7
- 0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
2.0
1.3
- 55 to 150
1.1
0.7
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
46
85
26
62.5
110
35
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73073
S09-0704-Rev. C, 27-Apr-09
www.vishay.com
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